Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method

L. N. Gao; S. N. Song; J. W. Zhai; X. Yao; Z. K. Xu

doi:10.1016/j.jcrysgro.2007.12.015

Author(s)

L. N. Gao
S. N. Song
J. W. Zhai
X. Yao
Z. K. Xu

Detail(s)

Original language	English
Pages (from-to)	1245-1249
Journal / Publication	Journal of Crystal Growth
Volume	310
Issue number	6
Publication status	Published - 15 Mar 2008

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2007.12.015 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-39649095614&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(aeb56ec7-a361-4b1a-98b2-bd6fc4f11483).html

Abstract

Ba(Zr_0.20Ti_0.80)O₃ (BZT) thin films were deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0), LaNiO₃ (LNO) and CeO₂-buffered Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates exhibited highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates with LNO and CeO₂ buffer layers showed, respectively, highly (1 0 0) and (1 1 0) preferred orientation. At 1 MHz, the dielectric constants were 416, 465 and 245 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0), LNO and CeO₂-buffered Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates, respectively. The difference in dielectric properties of these three kinds of BZT films may be attributed to the different grain sizes and various orientations. © 2008 Elsevier B.V. All rights reserved.

Research Area(s)

A1. Characterization, A1. Crystal structure, A1. X-ray diffraction, B1. Oxides, B2. Ferroelectric materials

Citation Format(s)

[ RIS ] [ BibTeX ]

Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method. / Gao, L. N.; Song, S. N.; Zhai, J. W. et al.

In: Journal of Crystal Growth, Vol. 310, No. 6, 15.03.2008, p. 1245-1249.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Gao, LN, Song, SN, Zhai, JW, Yao, X & Xu, ZK 2008, 'Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method', Journal of Crystal Growth, vol. 310, no. 6, pp. 1245-1249. https://doi.org/10.1016/j.jcrysgro.2007.12.015

Gao, L. N., Song, S. N., Zhai, J. W., Yao, X., & Xu, Z. K. (2008). Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method. Journal of Crystal Growth, 310(6), 1245-1249. https://doi.org/10.1016/j.jcrysgro.2007.12.015

Gao LN, Song SN, Zhai JW, Yao X, Xu ZK. Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method. Journal of Crystal Growth. 2008 Mar 15;310(6):1245-1249. doi: 10.1016/j.jcrysgro.2007.12.015

Gao, L. N. ; Song, S. N. ; Zhai, J. W. et al. / Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 6. pp. 1245-1249.