Stability and low-frequency noise in InAs NW parallel-array thin-film transistors
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Article number | 6515612 |
Pages (from-to) | 765-767 |
Journal / Publication | IEEE Electron Device Letters |
Volume | 34 |
Issue number | 6 |
Publication status | Published - 2013 |
Link(s)
Abstract
In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs. © 1980-2012 IEEE.
Research Area(s)
- InAs, low-frequency noise, nanowire (NW) parallel arrays, stability, thin-film transistors (TFTs)
Citation Format(s)
Stability and low-frequency noise in InAs NW parallel-array thin-film transistors. / Wahl, Richard E.; Wang, Fengyun; Chung, Hugh E. et al.
In: IEEE Electron Device Letters, Vol. 34, No. 6, 6515612, 2013, p. 765-767.
In: IEEE Electron Device Letters, Vol. 34, No. 6, 6515612, 2013, p. 765-767.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review