Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

9 Scopus Citations
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Author(s)

  • Richard E. Wahl
  • Fengyun Wang
  • Hugh E. Chung
  • George R. Kunnen
  • Edward H. Lee
  • Gregory B. Raupp
  • David R. Allee

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number6515612
Pages (from-to)765-767
Journal / PublicationIEEE Electron Device Letters
Volume34
Issue number6
Publication statusPublished - 2013

Abstract

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs. © 1980-2012 IEEE.

Research Area(s)

  • InAs, low-frequency noise, nanowire (NW) parallel arrays, stability, thin-film transistors (TFTs)

Citation Format(s)

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors. / Wahl, Richard E.; Wang, Fengyun; Chung, Hugh E. et al.
In: IEEE Electron Device Letters, Vol. 34, No. 6, 6515612, 2013, p. 765-767.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review