Modal analysis of out-of-plane vibrations in switchable piezoelectric Gallium Nitride micromechanical resonators

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publication2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)
PublisherIEEE
Pages1977-1980
ISBN (Electronic)978-1-4799-8955-3
Publication statusPublished - 21 Jun 2015

Conference

Title18th Int. Conf. on Solid-State Sensors, Actuators and Microsystems (Transducers 2015)
PlaceUnited States
CityAnchorage, AK
Period21 - 25 June 2015

Abstract

This paper analyzes higher order out-of-plane vibrations in a piezoelectric Gallium Nitride (GaN) MEMS resonator that utilizes the two-dimensional electron gas (2DEG) as a switchable and embedded electrode. More specifically, we show that the out-of-plane vibration mode that provides the strongest electromechanical resonance (~12MHz) has an associated stress field that allows charges generated from the orthogonal stresses (σx and σy) via the piezoelectric effect to add up constructively. Besides, we show that the 2DEG bottom electrode can be depleted to reduce the resonant peak till it is indistinguishable from the noise floor. The on-off ratio between the resonant peaks at zero gate bias vs. 2DEG depletion is 41dB and resonator has a quality factor of 3,900.

Citation Format(s)

Modal analysis of out-of-plane vibrations in switchable piezoelectric Gallium Nitride micromechanical resonators. / TU, Cheng; GUO, Xinglong; LEE, En-yuan Joshua.

2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) . IEEE, 2015. p. 1977-1980.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review