Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Title of host publication | Proceedings |
Subtitle of host publication | 1998 5th International Conference on Solid-State and Integrated Circuit Technology |
Publisher | IEEE |
Pages | 268-270 |
ISBN (Print) | 0-7803-4306-9 |
Publication status | Published - Oct 1998 |
Conference
Title | 1998 5th International Conference on Solid-State and Integrated Circuit Technology |
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Location | |
Place | China |
City | Beijing |
Period | 21 - 23 October 1998 |
Link(s)
DOI | DOI |
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Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(a8e7db47-6353-4f6d-9862-88030887f769).html |
Abstract
A new approach to fabricate Si/CoSi2/Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.
Bibliographic Note
Research Unit(s) information for this publication is provided by the author(s) concerned.
Citation Format(s)
Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy. / Qu, Xin-Ping; Ru, Guo-Ping; Li, Bing-Zong et al.
Proceedings: 1998 5th International Conference on Solid-State and Integrated Circuit Technology. IEEE, 1998. p. 268-270.Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review