Enhancement of critical current density in low level Al-doped MgB2

A. Berenov; A. Serquis; X. Z. Liao; Y. T. Zhu; D. E. Peterson; Y. Bugoslavsky; K. A. Yates; M. G. Blamire; L. F. Cohen; J. L. MacManus-Driscoll

doi:10.1088/0953-2048/17/10/001

Author(s)

A. Berenov
A. Serquis
X. Z. Liao
D. E. Peterson
Y. Bugoslavsky
K. A. Yates
M. G. Blamire
L. F. Cohen
J. L. MacManus-Driscoll

Detail(s)

Original language	English
Pages (from-to)	1093-1096
Journal / Publication	Superconductor Science and Technology
Volume	17
Issue number	10
Online published	23 Jul 2004
Publication status	Published - Oct 2004
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1088/0953-2048/17/10/001 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-6344255056&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(a806c6c7-3683-4936-b611-7c0eb6315cb6).html

Abstract

Two sets of MgB₂ samples doped with up to 5 at.% of Al were prepared in different laboratories using different procedures. Decreases in the 'a' and 'c' lattice parameters were observed with Al doping, confirming Al substitution onto the Mg site. The critical temperature (T_c) remained largely unchanged with Al doping. For 1-2.5 at.% doping, at 20 K the in-field critical current densities (J_cs) were enhanced, particularly at lower fields. At 5 K, the in-field J_c was markedly improved; for example at 5 T J_c was enhanced by a factor of 20 for a doping level of 1 at.% Al. The improved J_cs correlate with increased sample resistivity, which is indicative of an increase in the upper critical field, H_c2, through alloying.

Citation Format(s)

[ RIS ] [ BibTeX ]

Enhancement of critical current density in low level Al-doped MgB₂. / Berenov, A.; Serquis, A.; Liao, X. Z. et al.
In: Superconductor Science and Technology, Vol. 17, No. 10, 10.2004, p. 1093-1096.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Berenov, A, Serquis, A, Liao, XZ, Zhu, YT, Peterson, DE, Bugoslavsky, Y, Yates, KA, Blamire, MG, Cohen, LF & MacManus-Driscoll, JL 2004, 'Enhancement of critical current density in low level Al-doped MgB₂', Superconductor Science and Technology, vol. 17, no. 10, pp. 1093-1096. https://doi.org/10.1088/0953-2048/17/10/001

Berenov, A., Serquis, A., Liao, X. Z., Zhu, Y. T., Peterson, D. E., Bugoslavsky, Y., Yates, K. A., Blamire, M. G., Cohen, L. F., & MacManus-Driscoll, J. L. (2004). Enhancement of critical current density in low level Al-doped MgB₂. Superconductor Science and Technology, 17(10), 1093-1096. https://doi.org/10.1088/0953-2048/17/10/001

Berenov A, Serquis A, Liao XZ, Zhu YT, Peterson DE, Bugoslavsky Y et al. Enhancement of critical current density in low level Al-doped MgB₂. Superconductor Science and Technology. 2004 Oct;17(10):1093-1096. Epub 2004 Jul 23. doi: 10.1088/0953-2048/17/10/001

Berenov, A. ; Serquis, A. ; Liao, X. Z. et al. / Enhancement of critical current density in low level Al-doped MgB₂. In: Superconductor Science and Technology. 2004 ; Vol. 17, No. 10. pp. 1093-1096.