Band structure of germanium carbides for direct bandgap silicon photonics

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • C. A. Stephenson
  • W. A. O'Brien
  • M. W. Penninger
  • W. F. Schneider
  • M. Gillett-Kunnath
  • J. Zajicek
  • R. Kudrawiec
  • R. A. Stillwell
  • M. A. Wistey

Detail(s)

Original languageEnglish
Article number53102
Journal / PublicationJournal of Applied Physics
Volume120
Issue number5
Publication statusPublished - 7 Aug 2016

Link(s)

Abstract

Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge1-xCx (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge0.998C0.002 shows a bandgap reduction supporting these results. Growth of Ge0.998C0.002 using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III-V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

Research Area(s)

Citation Format(s)

Band structure of germanium carbides for direct bandgap silicon photonics. / Stephenson, C. A.; O'Brien, W. A.; Penninger, M. W. et al.
In: Journal of Applied Physics, Vol. 120, No. 5, 53102, 07.08.2016.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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