Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1−x Nanosheets for p‑Type Transistors and Inverters
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 17293-17303 |
Journal / Publication | ACS Nano |
Volume | 18 |
Issue number | 26 |
Online published | 17 Jun 2024 |
Publication status | Published - 2 Jul 2024 |
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Abstract
Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1-x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1-x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se−Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1-x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V-1·s-1, being eight times higher than thermally evaporated SexTe1-x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V. © 2024 American Chemical Society.
Research Area(s)
- 2D transistors, chemical vapor deposition, inverters, precursor-confined, SexTe1−x nanosheets
Citation Format(s)
Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1−x Nanosheets for p‑Type Transistors and Inverters. / Huang, Haoxin; Zha, Jiajia; Xu, Songcen et al.
In: ACS Nano, Vol. 18, No. 26, 02.07.2024, p. 17293-17303.
In: ACS Nano, Vol. 18, No. 26, 02.07.2024, p. 17293-17303.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review