A 750-1000 GHz H-Plane Dielectric Horn Based on Silicon Technology

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Article number7636990
Pages (from-to)5074-5083
Journal / PublicationIEEE Transactions on Antennas and Propagation
Volume64
Issue number12
Online published24 Oct 2016
Publication statusPublished - Dec 2016

Abstract

A wideband THz H-plane dielectric horn antenna based on silicon (Si) technology is proposed in this paper. The antenna can be integrated with the planar structure circuit and the dielectric ridge waveguide. To fabricate the proposed antenna, the deep reactive ion etching high-resistivity Si fabrication process is used. The size of the proposed antenna is 3.13 × 4 × 0.1 mm3. The operating frequency of the antenna ranges from 750 to 1000 GHz, which corresponds to a fractional impedance bandwidth of 28.6%. The antenna has a narrow beamwidth in the H-plane and a high gain. To test this antenna, the characterization of the metal waveguide diagonal horn for measurement is analyzed. Then the non-contact measurement method is applied to measure the designed dielectric horn. The simulated radiation efficiency of the antenna is higher than 80% while the measured gain of the antenna is larger than 8 dBi. Measured H-plane radiation patterns from the proposed antenna are presented and show reasonable agreement with the simulated results.

Research Area(s)

  • Dielectric ridge waveguide (DRW), H-plane dielectric horn antenna, non-contact measurement method, silicon (Si) technology, THz antenna