Thermodynamic Study on Diffusion Growth of Ga3+-Doped LiNbO3 Single Crystal Thin Film for Photonic Application

De-Long Zhang; Qun Zhang; Jian Kang; Wing-Han Wong; Dao-Yin Yu; Edwin Yue-Bun Pun

doi:10.1021/acs.cgd.5b01415

Author(s)

De-Long Zhang
Qun Zhang
Jian Kang
Wing-Han Wong
Dao-Yin Yu

Related Research Unit(s)

Detail(s)

Original language	English
Pages (from-to)	1300-1305
Journal / Publication	Crystal Growth and Design
Volume	16
Issue number	3
Publication status	Published - 2 Mar 2016

Link(s)

DOI	DOI https://doi.org/10.1021/acs.cgd.5b01415 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84960153142&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(a02defde-98aa-40d8-9f8d-0c247c24f377).html

Abstract

A thermodynamic study was performed on the growth of Ga³⁺-doped LiNbO₃ (LN) thin film. Some Ga³⁺-doped LN thin films were grown on the LN surface by thermal diffusion of Ga₂O₃ film in the temperature range of 1000-1100 °C. After growth, the Ga³⁺ ion in the grown thin film was profiled, and its diffusion-growth characteristics were studied. The temperature dependences of diffusion-growth coefficient and solubility were quantified. These dependences are crucial to the design and growth of a Ga³⁺-doped LN thin film for various photonic applications. A comparison with the case of Ti⁴⁺ diffusion-growth, which induces an increase of LN refractive index and hence formation of an optical waveguide, shows that Ga³⁺ grows considerably faster than Ti⁴⁺ because of its smaller ionic radius. In addition, Ga³⁺-doping contribution to LN refractive index was studied by measuring and comparing the refractive indices at Ga³⁺-grown and Ga³⁺-free parts of the crystal surface. The results show that the contribution is small.

Citation Format(s)

[ RIS ] [ BibTeX ]

Thermodynamic Study on Diffusion Growth of Ga³⁺-Doped LiNbO₃ Single Crystal Thin Film for Photonic Application. / Zhang, De-Long; Zhang, Qun; Kang, Jian et al.
In: Crystal Growth and Design, Vol. 16, No. 3, 02.03.2016, p. 1300-1305.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Zhang, D-L, Zhang, Q, Kang, J, Wong, W-H, Yu, D-Y & Pun, EY-B 2016, 'Thermodynamic Study on Diffusion Growth of Ga³⁺-Doped LiNbO₃ Single Crystal Thin Film for Photonic Application', Crystal Growth and Design, vol. 16, no. 3, pp. 1300-1305. https://doi.org/10.1021/acs.cgd.5b01415

Zhang, D.-L., Zhang, Q., Kang, J., Wong, W.-H., Yu, D.-Y., & Pun, E. Y.-B. (2016). Thermodynamic Study on Diffusion Growth of Ga³⁺-Doped LiNbO₃ Single Crystal Thin Film for Photonic Application. Crystal Growth and Design, 16(3), 1300-1305. https://doi.org/10.1021/acs.cgd.5b01415

Zhang DL, Zhang Q, Kang J, Wong WH, Yu DY, Pun EYB. Thermodynamic Study on Diffusion Growth of Ga³⁺-Doped LiNbO₃ Single Crystal Thin Film for Photonic Application. Crystal Growth and Design. 2016 Mar 2;16(3):1300-1305. doi: 10.1021/acs.cgd.5b01415

Zhang, De-Long ; Zhang, Qun ; Kang, Jian et al. / Thermodynamic Study on Diffusion Growth of Ga³⁺-Doped LiNbO₃ Single Crystal Thin Film for Photonic Application. In: Crystal Growth and Design. 2016 ; Vol. 16, No. 3. pp. 1300-1305.