Thermodynamic Study on Diffusion Growth of Ga3+-Doped LiNbO3 Single Crystal Thin Film for Photonic Application

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • De-Long Zhang
  • Qun Zhang
  • Jian Kang
  • Wing-Han Wong
  • Dao-Yin Yu

Detail(s)

Original languageEnglish
Pages (from-to)1300-1305
Journal / PublicationCrystal Growth and Design
Volume16
Issue number3
Publication statusPublished - 2 Mar 2016

Abstract

A thermodynamic study was performed on the growth of Ga3+-doped LiNbO3 (LN) thin film. Some Ga3+-doped LN thin films were grown on the LN surface by thermal diffusion of Ga2O3 film in the temperature range of 1000-1100 °C. After growth, the Ga3+ ion in the grown thin film was profiled, and its diffusion-growth characteristics were studied. The temperature dependences of diffusion-growth coefficient and solubility were quantified. These dependences are crucial to the design and growth of a Ga3+-doped LN thin film for various photonic applications. A comparison with the case of Ti4+ diffusion-growth, which induces an increase of LN refractive index and hence formation of an optical waveguide, shows that Ga3+ grows considerably faster than Ti4+ because of its smaller ionic radius. In addition, Ga3+-doping contribution to LN refractive index was studied by measuring and comparing the refractive indices at Ga3+-grown and Ga3+-free parts of the crystal surface. The results show that the contribution is small.

Citation Format(s)

Thermodynamic Study on Diffusion Growth of Ga3+-Doped LiNbO3 Single Crystal Thin Film for Photonic Application. / Zhang, De-Long; Zhang, Qun; Kang, Jian; Wong, Wing-Han; Yu, Dao-Yin; Pun, Edwin Yue-Bun.

In: Crystal Growth and Design, Vol. 16, No. 3, 02.03.2016, p. 1300-1305.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review