An upconverted photonic nonvolatile memory
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Article number | 4720 |
Journal / Publication | Nature Communications |
Volume | 5 |
Online published | 21 Aug 2014 |
Publication status | Published - 2014 |
Link(s)
Abstract
Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics. © 2014 Macmillan Publishers Limited.
Citation Format(s)
An upconverted photonic nonvolatile memory. / Zhou, Ye; Han, Su-Ting; Chen, Xian et al.
In: Nature Communications, Vol. 5, 4720, 2014.
In: Nature Communications, Vol. 5, 4720, 2014.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review