An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Detail(s)

Original languageEnglish
Title of host publicationTRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages607-610
ISBN (Electronic)978-1-5386-2732-7
ISBN (Print)9781538627310
Publication statusPublished - Jun 2017

Conference

Title19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
LocationKaohsiung Exhibition Center
PlaceTaiwan
CityKaohsiung
Period18 - 22 June 2017

Abstract

We present an Aluminum Nitride (AlN) on Silicon (Si) resonant MEMS accelerometer with a calibrated differential sensitivity of 387 ppm/g measured in ambient conditions in air. This marks the highest figure of sensitivity among piezoelectric AlN-based resonant accelerometers reported to date by nearly an order of magnitude. The device is composed of a seismic mass attached to a pair of identical triple beam tuning forks (TBTFs) vibrating in an out-of-phase mode at a resonant frequency of 137.6 kHz.

Research Area(s)

  • Aluminum nitride-on-silicon, MEMS accelerometers, post-CMOS-compatible, resonant sensing

Citation Format(s)

An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure. / Chao, Ming Yu; Ali, Abid; Ghosh, Sagnik et al.

TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 607-610 7994122.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review