An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Title of host publication | TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 607-610 |
| ISBN (Electronic) | 978-1-5386-2732-7 |
| ISBN (Print) | 9781538627310 |
| Publication status | Published - Jun 2017 |
Conference
| Title | 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 |
|---|---|
| Location | Kaohsiung Exhibition Center |
| Place | Taiwan |
| City | Kaohsiung |
| Period | 18 - 22 June 2017 |
Link(s)
Abstract
We present an Aluminum Nitride (AlN) on Silicon (Si) resonant MEMS accelerometer with a calibrated differential sensitivity of 387 ppm/g measured in ambient conditions in air. This marks the highest figure of sensitivity among piezoelectric AlN-based resonant accelerometers reported to date by nearly an order of magnitude. The device is composed of a seismic mass attached to a pair of identical triple beam tuning forks (TBTFs) vibrating in an out-of-phase mode at a resonant frequency of 137.6 kHz.
Research Area(s)
- Aluminum nitride-on-silicon, MEMS accelerometers, post-CMOS-compatible, resonant sensing
Citation Format(s)
An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure. / Chao, Ming Yu; Ali, Abid; Ghosh, Sagnik et al.
TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 607-610 7994122.Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
