Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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  • Xin Ping Qu
  • Guo Ping Ru
  • Bing Zong Li
  • Jie Qin
  • Zui Min Jiang


Original languageEnglish
Pages (from-to)268-270
Journal / PublicationInternational Conference on Solid-State and Integrated Circuit Technology Proceedings
Publication statusPublished - 1998
Externally publishedYes


TitleProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period21 - 23 October 1998


A new approach to fabricate Si/CoSi2/Si heterostructure is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.

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