Interface Structure and Atomic Bonding Characteristics in Silicon Nitride Ceramics

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • A. Ziegler
  • J. C. Idrobo
  • M. K. Cinibulk
  • C. Kisielowski
  • N. D. Browning

Detail(s)

Original languageEnglish
Pages (from-to)1768-1770
Journal / PublicationScience
Volume306
Issue number5702
Publication statusPublished - 3 Dec 2004
Externally publishedYes

Abstract

Direct atomic resolution images have been obtained that illustrate how a range of rare-earth atoms bond to the interface between the intergranular phase and the matrix grains in an advanced silicon nitride ceramic. It has been found that each rare-earth atom bonds to the interface at a different location, depending on atom size, electronic configuration, and the presence of oxygen at the interface. This is the key factor to understanding the origin of the mechanical properties in these ceramics and will enable precise tailoring in the future to critically improve the materials' performance in wide-ranging applications.

Citation Format(s)

Interface Structure and Atomic Bonding Characteristics in Silicon Nitride Ceramics. / Ziegler, A.; Idrobo, J. C.; Cinibulk, M. K.; Kisielowski, C.; Browning, N. D.; Ritchie, R. O.

In: Science, Vol. 306, No. 5702, 03.12.2004, p. 1768-1770.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal