Modeling manufacturing yield and reliability

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

40 Scopus Citations
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Original languageEnglish
Pages (from-to)485-492
Journal / PublicationIEEE Transactions on Semiconductor Manufacturing
Issue number4
Publication statusPublished - 1999
Externally publishedYes


In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-related gate oxide breakdown mechanism, and build the yield-reliability relation model. Discussions presented here can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through the relation model, it is possible to find a minimum level of latent defect screening to assure the required level of reliability and predict reliability for new products when it is combined with a yield prediction model.