Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • E. García-Hemme
  • K. M. Yu
  • P. Wahnon
  • G. González-Díaz
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Article number182101
Journal / PublicationApplied Physics Letters
Volume106
Issue number18
Publication statusPublished - 4 May 2015

Link(s)

Abstract

We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn1-xVxO with 0 ≤ x ≤ 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x = 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB (E+) and the downward shift of the fully occupied E- band derived from the vanadium d-levels. The composition dependence of optical absorption edge (E+) and PL peak (E-) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.

Research Area(s)

Citation Format(s)

Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films. / García-Hemme, E.; Yu, K. M.; Wahnon, P. et al.
In: Applied Physics Letters, Vol. 106, No. 18, 182101, 04.05.2015.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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