Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 758-763 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 54 |
| Issue number | 2 |
| Publication status | Published - 1983 |
| Externally published | Yes |
Link(s)
Abstract
In this study, we attempt to clarify the difference between interdiffusion in thin-film and in bulk samples, and we have chosen the Ni-Si binary system for experimentation. A major difference is in the behavior of intermetallic compound formation; while the compounds form sequentially in thin films, they tend to appear simultaneously in bulk samples. The essence of sequential formation is the absence of the other stable phases during the growth of a specific one. We have used cross-sectional lattice imaging of the interface between a NiSi film and a Si to confirm the absence of NiSi2 at the interface. Other differences between the sequential growth of a compound in the thin-film Ni-Si samples and the simultaneous growth of several compounds in the bulk Ni-Si samples have been compared and discussed.
Bibliographic Note
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Citation Format(s)
Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system. / Tu, K. N.; Ottaviani, G.; Gösele, U. et al.
In: Journal of Applied Physics, Vol. 54, No. 2, 1983, p. 758-763.
In: Journal of Applied Physics, Vol. 54, No. 2, 1983, p. 758-763.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
