选择具有不同溅射产额的靶材料 (Cu, Cr, Mo, Ti, V 和 C), 研究了其高功率脉冲磁控溅射 (HPPMS) 放电靶电流波形随靶电压的演化行为. 发现所有材料都满足 5 个阶段顺序放电特征, 但是不同溅射产额的材料的相同放电阶段所需要的靶电压呈现先增加后下降的趋势, 根据放电难易的不同分别表现出一定阶段的缺失. 对其靶电流平均值、峰值和平台值的统计显示, 溅射产额高的靶材料自溅射容易, 平台稳定, 对靶电流的贡献主要为平台值(金属放电), 比较适用于 HPPMS 方法沉积薄膜; 而溅射产额低的靶材料气体放电明显, 靶电流主要由峰值(气体放电)贡献, 不利于薄膜沉积.

Great interesting is induced by high power pulsed magnetron sputtering (HPPMS) for its high ionization of the sputtered materials, while the complex discharge puts of its applications in industry. The HPPMS discharge behaviors of various materials with different sputtering yields (Cu, Cr, Mo, Ti, V and C) were studied. The discharges of all the materials show a phasic discharge characteristic of five continuous stages. However, the target voltage of the same discharge stage of the material increases firstly, and decreases then with the increase of the sputtering yields, exhibiting a missing of certain discharge stage. The statistics of the mean values, peaks and platforms of the target currents show that self-sputtering and stable platform happen easily to the materials with high sputtering yields which is suitable for the thin films deposition by HPPMS, whereas gas discharge is dominated in the discharge of the materials with low sputtering yields, which is difficult in the using of HPPMS. Additional, the target current is mainly contributed to the platform (metal discharge) to the materials with high sputtering yields and the peaks (gas discharge) to the materials with low sputtering yields, respectively.