High-quality, faceted cubic boron nitride films grown by chemical vapor deposition
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 4530-4532 |
| Journal / Publication | Applied Physics Letters |
| Volume | 79 |
| Issue number | 27 |
| Publication status | Published - 31 Dec 2001 |
| Externally published | Yes |
Link(s)
Abstract
Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface. © 2001 American Institute of Physics.
Citation Format(s)
High-quality, faceted cubic boron nitride films grown by chemical vapor deposition. / Zhang, W. J.; Jiang, X.; Matsumoto, S.
In: Applied Physics Letters, Vol. 79, No. 27, 31.12.2001, p. 4530-4532.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
