Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

K. Y. Lai; G. J. Lin; Y.-L. Lai; Y. F. Chen; J. H. He

doi:10.1063/1.3327331

Author(s)

K. Y. Lai
G. J. Lin
Y.-L. Lai
Y. F. Chen
J. H. He

Detail(s)

Original language	English
Article number	081103
Journal / Publication	Applied Physics Letters
Volume	96
Issue number	8
Online published	22 Feb 2010
Publication status	Published - 22 Feb 2010
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.3327331 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-77749246078&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(83452f1e-e406-4304-9c34-7d483bace4b1).html

Abstract

Severe In fluctuation was observed in In_0.3Ga_0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and η were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.

Research Area(s)

SDG 7 - Affordable and Clean Energy

Citation Format(s)

[ RIS ] [ BibTeX ]

Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells. / Lai, K. Y.; Lin, G. J.; Lai, Y.-L. et al.
In: Applied Physics Letters, Vol. 96, No. 8, 081103, 22.02.2010.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Lai, KY, Lin, GJ, Lai, Y-L, Chen, YF & He, JH 2010, 'Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells', Applied Physics Letters, vol. 96, no. 8, 081103. https://doi.org/10.1063/1.3327331

Lai, K. Y., Lin, G. J., Lai, Y.-L., Chen, Y. F., & He, J. H. (2010). Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells. Applied Physics Letters, 96(8), Article 081103. https://doi.org/10.1063/1.3327331

Lai KY, Lin GJ, Lai YL, Chen YF, He JH. Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells. Applied Physics Letters. 2010 Feb 22;96(8):081103. Epub 2010 Feb 22. doi: 10.1063/1.3327331

Lai, K. Y. ; Lin, G. J. ; Lai, Y.-L. et al. / Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells. In: Applied Physics Letters. 2010 ; Vol. 96, No. 8.