A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

5 Scopus Citations
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Author(s)

  • Dong Chen
  • Chenxi Zhao
  • Shum Kam Man
  • Quan Xue
  • Kai Kang

Detail(s)

Original languageEnglish
Title of host publication9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings
PublisherIEEE
Pages55-57
Volume1
ISBN (Print)9781467389815
Publication statusPublished - 28 Nov 2016

Publication series

Name
Volume1

Conference

Title9th International Conference on Microwave and Millimeter Wave Technology (ICMMT 2016)
PlaceChina
CityBeijing
Period5 - 8 June 2016

Abstract

This paper presents a differential inverse class F power amplifier working in the 60GHz ISM band. Neutralized differential stacked structure is used in the power amplifier to get enough power gain and inverse isolation. The output harmonic waves are controlled by using the transformer and resonance branch to improve the peak power added efficiency (PAE). The proposed power amplifier achieves a maximum output power of 14.9dBm with a peak PAE of 16.3%. The power amplifier is fabricated using a standard 65nm CMOS technology.

Citation Format(s)

A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS. / Chen, Dong; Zhao, Chenxi; Man, Shum Kam; Xue, Quan; Kang, Kai.

9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings. Vol. 1 IEEE, 2016. p. 55-57 7761675.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review