A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Title of host publication | 9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers, Inc. |
Pages | 55-57 |
Volume | 1 |
ISBN (print) | 9781467389815 |
Publication status | Published - 28 Nov 2016 |
Publication series
Name | |
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Volume | 1 |
Conference
Title | 9th International Conference on Microwave and Millimeter Wave Technology (ICMMT 2016) |
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Place | China |
City | Beijing |
Period | 5 - 8 June 2016 |
Link(s)
Abstract
This paper presents a differential inverse class F power amplifier working in the 60GHz ISM band. Neutralized differential stacked structure is used in the power amplifier to get enough power gain and inverse isolation. The output harmonic waves are controlled by using the transformer and resonance branch to improve the peak power added efficiency (PAE). The proposed power amplifier achieves a maximum output power of 14.9dBm with a peak PAE of 16.3%. The power amplifier is fabricated using a standard 65nm CMOS technology.
Citation Format(s)
A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS. / Chen, Dong; Zhao, Chenxi; Man, Shum Kam et al.
9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings. Vol. 1 Institute of Electrical and Electronics Engineers, Inc., 2016. p. 55-57 7761675.
9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings. Vol. 1 Institute of Electrical and Electronics Engineers, Inc., 2016. p. 55-57 7761675.
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review