Growth of nanowires

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)1-51
Journal / PublicationMaterials Science and Engineering R: Reports
Issue number1-6
Publication statusPublished - 31 Mar 2008


The tremendous interest in nanoscale structures such as quantum dots (zero-dimension) and wires (quasi-one-dimension) stems from their size-dependent properties. One-dimensional (1D) semiconductor nanostructures are of particular interest because of their potential applications in nanoscale electronic and optoelectronic devices. For 1D semiconductor nanomaterials to have wide practical application, however, several areas require further development. In particular, the fabrication of desired 1D nanomaterials with tailored atomic structures and their assembly into functional devices are still major challenges for nanotechnologists. In this review, we focus on the status of research on the formation of nanowire structures via highly anisotropic growth of nanocrystals of semiconductor and metal oxide materials with an emphasis on the structural characterization of the nucleation, initial growth, defects and interface structures, as well as on theoretical analyses of nanocrystal formation, reactivity and stability. We review various methods used and mechanisms involved to generate 1D nanostructures from different material systems through self-organized growth techniques including vapor-liquid-solid growth, oxide-assisted chemical vapor deposition (without a metal catalyst), laser ablation, thermal evaporation, metal-catalyzed molecular beam epitaxy, chemical beam epitaxy and hydrothermal reaction. 1D nanostructures grown by these technologies have been observed to exhibit unusual growth phenomena and unexpected properties, e.g., diameter-dependent and temperature-dependent growth directions, structural transformation by enhanced photothermal effects and phase transformation induced by the point contact reaction in ultra-thin semiconductor nanowires. Recent progress in controlling growth directions, defects, interface structures, structural transformation, contacts and hetero-junctions in 1D nanostructures is addressed. Also reviewed are the quantitative explorations and predictions of some challenging 1D nanostructures and descriptions of the growth mechanisms of 1D nanostructures, based on the energetic, dynamic and kinetic behaviors of the building block nanostructures and their surfaces and/or interfaces. © 2008 Elsevier B.V. All rights reserved.

Citation Format(s)

Growth of nanowires. / Wang, N.; Cai, Y.; Zhang, R. Q.

In: Materials Science and Engineering R: Reports, Vol. 60, No. 1-6, 31.03.2008, p. 1-51.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review