Power amplifier with high transformation ratio power combiner in GaAs Technology

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

1 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Title of host publicationIEEE iWEM 2014 - IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Pages199-200
ISBN (print)9781479948154
Publication statusPublished - 20 Nov 2014

Workshop

Title2014 IEEE International Workshop on Electromagnetics (IEEE iWEM 2014)
PlaceJapan
CitySapporo, Hokkaido
Period4 - 6 August 2014

Abstract

A 2.6GHz voltage-mode power combiner with transformer is realized in Gallium Arsenide (GaAs) Technology. The proposed voltage-mode transformer combiner enhances the impedance transformation ratio without sacrificing its overall transfer efficiency. The improvement can let the power amplifier (PA) deliver higher output power and then tackle the barrier in low break-down voltage normally found in CMOS technology. A simple methodology is also presented to design such a combiner which is realized with a power amplifier (PA) design. Numerical modeling of the transformer and successful power combining of the 2-Watt PA demonstrate the proposed idea.

Research Area(s)

  • GaAs power combiner, transformation ratio, voltage-mode transformer based combiner

Citation Format(s)

Power amplifier with high transformation ratio power combiner in GaAs Technology. / Lam, Wai Lun; Chan, Chi Hou.
IEEE iWEM 2014 - IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition. Institute of Electrical and Electronics Engineers, Inc., 2014. p. 199-200 6963705.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review