40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Journal / Publication | IEE Colloquium (Digest) |
| Issue number | 1986 /88 |
| Publication status | Published - 1986 |
| Externally published | Yes |
Link(s)
Abstract
This paper describes the design of a high gain (46dB), high power class A amplifier operating over the frequency range 850MHz to 1300MHz. It was primarily designed to provide 16dBW saturated output power. The microwave power amplification is achieved by using a medium power, high gain pre-driver preceding a driver which feeds a power amplifier. The pre-driver is a four stage, 30dB gain GaAs FET amplifier providing an output power of 30dBm. The driver amplifier consists of a class 'A' power GaAs FET which is matched to give maximum output power together with a flat gain characteristic throughout the band. The power amplifier comprises an eight-way power divider, eight active elements and an eight-way power combiner. Each active element of the power amplifier uses a power GaAs FET which is physically identical to the driver amplifier.
Bibliographic Note
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Citation Format(s)
40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs. / Chan, W. S.; Thompson, A.
In: IEE Colloquium (Digest), No. 1986 /88, 1986.
In: IEE Colloquium (Digest), No. 1986 /88, 1986.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
