N-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • D. S. Tasi
  • C. F. Kang
  • H. H. Wang
  • C. A. Lin
  • J. J. Ke
  • Y. H. Chu

Detail(s)

Original languageEnglish
Pages (from-to)1112-1114
Journal / PublicationOptics Letters
Volume37
Issue number6
Online published15 Mar 2012
Publication statusPublished - 15 Mar 2012
Externally publishedYes

Abstract

A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (∼2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.

Citation Format(s)

N-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection. / Tasi, D. S.; Kang, C. F.; Wang, H. H. et al.
In: Optics Letters, Vol. 37, No. 6, 15.03.2012, p. 1112-1114.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review