Formation and Schottky behavior of manganese silicides on n-type silicon
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 6885-6890 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 53 |
| Issue number | 10 |
| Publication status | Published - 1982 |
| Externally published | Yes |
Link(s)
Abstract
The formation of manganese silicides on Si has been studied by using Rutherford backscattering spectroscopy and glancing-incidence x-ray diffraction; electrical properties of these silicides on n-Si have been studied by current-voltage measurement of Schottky barrier height and four-probe measurement of sheet resistivity. Two silicides have been identified: MnSi formed at 400 °C and MnSi1.7 at 500 °C. The former obeys a parabolic growth in layer form with an activation energy of 1.9 eV, yet the latter grows in patches and is governed by a linear growth. The values of Schottky barrier height on n-type Si of these two silicides are very close: 0.65 and 0.67 eV, respectively, but their sheet resistivities differ significantly: 220 μΩ cm for MnSi and 4100 μΩ cm for MnSi1.7.
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Citation Format(s)
Formation and Schottky behavior of manganese silicides on n-type silicon. / Eizenberg, M.; Tu, K. N.
In: Journal of Applied Physics, Vol. 53, No. 10, 1982, p. 6885-6890.
In: Journal of Applied Physics, Vol. 53, No. 10, 1982, p. 6885-6890.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
