Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • H. G. Ong
  • J. W. Cheah
  • X. Zou
  • B. Li
  • X. H. Cao
  • H. Tantang
  • L-J Li
  • G. C. Han
  • J. Wang

Detail(s)

Original languageEnglish
Article number285301
Journal / PublicationJournal of Physics D: Applied Physics
Volume44
Issue number28
Online published24 Jun 2011
Publication statusPublished - 20 Jul 2011
Externally publishedYes

Abstract

Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues. © 2011 IOP Publishing Ltd.

Citation Format(s)

Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor. / Ong, H. G.; Cheah, J. W.; Zou, X.; Li, B.; Cao, X. H.; Tantang, H.; Li, L-J; Zhang, H.; Han, G. C.; Wang, J.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 28, 285301, 20.07.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review