Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS

Shichang Chen; Gaofeng Wang; Zhiqun Cheng; Pei Qin; Quan Xue

doi:10.1109/LMWC.2017.2662011

Author(s)

Shichang Chen
Gaofeng Wang
Zhiqun Cheng
Pei Qin
Quan Xue

Related Research Unit(s)

Detail(s)

Original language	English
Article number	7865996
Pages (from-to)	296-298
Journal / Publication	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	3
Publication status	Published - 1 Mar 2017

Link(s)

DOI	DOI https://doi.org/10.1109/LMWC.2017.2662011 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85015974148&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(5760cde3-3b46-4aa3-a255-dc05144a3c7a).html

Abstract

A 60-GHz Doherty power amplifier (PA) implemented in 65-nm bulk CMOS process is proposed. A novel adaptive biasing network is devised to dynamically adjust the bias voltage of the peaking PA, counteracting its low transconductance caused by the class-C biasing condition. At 60 GHz, the fabricated Doherty PA achieves 22% drain efficiency with a saturation power of 13.2 dBm. The measured results show that over 17% and 8% efficiencies at peak and 6-dB back-off power regions are achieved, respectively, from 57 to 64 GHz.

Research Area(s)

Adaptive biasing, cascode, Doherty power amplifier (PA), millimeter-wave (mm-wave) CMOS, power-added efficiency

Citation Format(s)

[ RIS ] [ BibTeX ]

Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS. / Chen, Shichang; Wang, Gaofeng; Cheng, Zhiqun et al.
In: IEEE Microwave and Wireless Components Letters, Vol. 27, No. 3, 7865996, 01.03.2017, p. 296-298.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Chen, S, Wang, G, Cheng, Z, Qin, P & Xue, Q 2017, 'Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS', IEEE Microwave and Wireless Components Letters, vol. 27, no. 3, 7865996, pp. 296-298. https://doi.org/10.1109/LMWC.2017.2662011

Chen, S., Wang, G., Cheng, Z., Qin, P., & Xue, Q. (2017). Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS. IEEE Microwave and Wireless Components Letters, 27(3), 296-298. Article 7865996. https://doi.org/10.1109/LMWC.2017.2662011

Chen S, Wang G, Cheng Z, Qin P, Xue Q. Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS. IEEE Microwave and Wireless Components Letters. 2017 Mar 1;27(3):296-298. 7865996. doi: 10.1109/LMWC.2017.2662011

Chen, Shichang ; Wang, Gaofeng ; Cheng, Zhiqun et al. / Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS. In: IEEE Microwave and Wireless Components Letters. 2017 ; Vol. 27, No. 3. pp. 296-298.