Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
---|---|
Pages (from-to) | 2405-2408 |
Journal / Publication | Matter |
Volume | 5 |
Issue number | 8 |
Publication status | Published - 3 Aug 2022 |
Link(s)
Abstract
The growth of wafer-scale two-dimensional (2D) single crystals, especially transition metal dichalcogenides (TMDs), is significantly essential for various electronic applications. However, the growth of wafer-scale single-crystal TMD (sc-TMD) monolayers on commercial substrates still remains challenging. Recently, two works published in Nature Nanotechnology have independently reported a substrate-cutting strategy for epitaxial growth of wafer-scale sc-TMD monolayers, which might open up a new route for preparing wafer-scale sc-TMD monolayers on commercially scalable insulating substrates for future electronics.
Citation Format(s)
Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics. / Zhai, Wei; Li, Zijian; Zhai, Li et al.
In: Matter, Vol. 5, No. 8, 03.08.2022, p. 2405-2408.
In: Matter, Vol. 5, No. 8, 03.08.2022, p. 2405-2408.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review