Recent advances on electromigration in very-large-scale-integration of interconnects

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Original languageEnglish
Pages (from-to)5451-5473
Journal / PublicationJournal of Applied Physics
Issue number9
Publication statusPublished - 1 Nov 2003
Externally publishedYes


The electromigration in Al,Cu and solder was compared on the basis of the ratio of their melting point to the device operating temperature of 100°C. The effects of microstructure, solute and stress on electromigration in Al, Cu and solder were found to be different. It was found that in mean-time-to-failure analysis, the time taken to nucleate a void is much longer than the growth of the void in Al and solder interconnects.

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