Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy

S. V. Novikov; M. Ting; K. M. Yu; W. L. Sarney; R. W. Martin; S. P. Svensson; W. Walukiewicz; C. T. Foxon

doi:10.1016/j.jcrysgro.2014.06.042

Author(s)

S. V. Novikov
M. Ting
W. L. Sarney
R. W. Martin
S. P. Svensson
W. Walukiewicz
C. T. Foxon

Detail(s)

Original language	English
Pages (from-to)	9-13
Journal / Publication	Journal of Crystal Growth
Volume	404
Publication status	Published - 2014
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2014.06.042 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84904270300&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(4eb42a6b-2ab6-4121-a9cb-6d2d5feea968).html

Abstract

In this paper we report our study on n-type Te doping of amorphous GaN_1-xAs_xlayers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN_1-xAs_xlayers has been successfully achieved with a maximum Te concentration of 9×10²⁰cm^-3. Tellurium incorporation resulted in n-doping of GaN_1-xAs_xlayers with Hall carrier concentrations up to 3×10¹⁹cm^-3and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN_1-xAs_xlayers has been determined.

Research Area(s)

A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials

Citation Format(s)

[ RIS ] [ BibTeX ]

Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy. / Novikov, S. V.; Ting, M.; Yu, K. M. et al.

In: Journal of Crystal Growth, Vol. 404, 2014, p. 9-13.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Novikov, SV, Ting, M, Yu, KM, Sarney, WL, Martin, RW, Svensson, SP, Walukiewicz, W & Foxon, CT 2014, 'Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy', Journal of Crystal Growth, vol. 404, pp. 9-13. https://doi.org/10.1016/j.jcrysgro.2014.06.042

Novikov, S. V., Ting, M., Yu, K. M., Sarney, W. L., Martin, R. W., Svensson, S. P., Walukiewicz, W., & Foxon, C. T. (2014). Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 404, 9-13. https://doi.org/10.1016/j.jcrysgro.2014.06.042

Novikov SV, Ting M, Yu KM, Sarney WL, Martin RW, Svensson SP et al. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 2014;404:9-13. doi: 10.1016/j.jcrysgro.2014.06.042

Novikov, S. V. ; Ting, M. ; Yu, K. M. et al. / Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy. In: Journal of Crystal Growth. 2014 ; Vol. 404. pp. 9-13.