Investigation of total dose effects in SiGe HBTs under different exposure conditions

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

8 Scopus Citations
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Author(s)

  • Yabin Sun
  • Ziyu Liu
  • Jun Fu
  • Xiaojin Li
  • Yanling Shi

Detail(s)

Original languageEnglish
Pages (from-to)84-89
Journal / PublicationRadiation Physics and Chemistry
Volume151
Online published24 May 2018
Publication statusPublished - Oct 2018

Abstract

This paper presents the total dose effects of gamma ray and swift heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The direct current (DC) characteristics, such as forward-Gummel, reverse-Gummel and current ideality factors before and after irradiation are analyzed and used to quantify the dose tolerance. Experiment results show that the performance degradation depends on the dose rate and bias condition during gamma ray irradiation. Compared to gamma ray irradiation, more serious base current degradation exists in the transistors exposed to 25 MeV Si ion. The base current in forward- and reverse-Gummel mode are found to show a distinct sensitivity to gamma ray and swift heavy ion irradiation. An increase in emitter current appears in the reverse-Gummel test after heavy ion irradiation. The underlying physical mechanisms are analyzed and investigated in detail.

Research Area(s)

  • Displacement damage, Ionization damage, SiGe HBT, Total dose effects

Citation Format(s)

Investigation of total dose effects in SiGe HBTs under different exposure conditions. / Sun, Yabin; Liu, Ziyu; Fu, Jun et al.
In: Radiation Physics and Chemistry, Vol. 151, 10.2018, p. 84-89.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review