Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

H. T.G. Hentzell; R. D. Thompson; K. N. Tu

doi:10.1063/1.331999

Author(s)

H. T.G. Hentzell
R. D. Thompson
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	6923-6928
Journal / Publication	Journal of Applied Physics
Volume	54
Issue number	12
Publication status	Published - 1983
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.331999 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0020878227&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(4ab23a2e-2f52-4dcc-b9f2-02657a629cea).html

Abstract

Interdiffusion in Cu-Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing-incidence x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ-CuAl₂ forming first, followed by η₂-CuAl, and γ₂- Cu₉Al₄. In samples with excess Al, the θ-CuAl ₂ is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ-CuAl₂ can be described by a prefactor of 7.4 cm²/s and an activation energy of 1.31 eV.

Bibliographic Note

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Citation Format(s)

[ RIS ] [ BibTeX ]

Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation. / Hentzell, H. T.G.; Thompson, R. D.; Tu, K. N.
In: Journal of Applied Physics, Vol. 54, No. 12, 1983, p. 6923-6928.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Hentzell, HTG, Thompson, RD & Tu, KN 1983, 'Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation', Journal of Applied Physics, vol. 54, no. 12, pp. 6923-6928. https://doi.org/10.1063/1.331999

Hentzell, H. T. G., Thompson, R. D., & Tu, K. N. (1983). Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation. Journal of Applied Physics, 54(12), 6923-6928. https://doi.org/10.1063/1.331999

Hentzell HTG, Thompson RD, Tu KN. Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation. Journal of Applied Physics. 1983;54(12):6923-6928. doi: 10.1063/1.331999

Hentzell, H. T.G. ; Thompson, R. D. ; Tu, K. N. / Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation. In: Journal of Applied Physics. 1983 ; Vol. 54, No. 12. pp. 6923-6928.