Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation

J. Jasinski; K. M. Yu; W. Walukiewicz; J. Washburn; Z. Liliental-Weber

doi:10.1063/1.1390487

Author(s)

J. Jasinski
K. M. Yu
W. Walukiewicz
J. Washburn
Z. Liliental-Weber

Detail(s)

Original language	English
Pages (from-to)	931-933
Journal / Publication	Applied Physics Letters
Volume	79
Issue number	7
Publication status	Published - 13 Aug 2001
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.1390487 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0035855075&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(483f5924-f210-418b-96ef-503a47c82d13).html

Abstract

Structural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that these voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor activation efficiency can be achieved only in a void-free region of the implanted sample. © 2001 American Institute of Physics.

Citation Format(s)

[ RIS ] [ BibTeX ]

Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation. / Jasinski, J.; Yu, K. M.; Walukiewicz, W. et al.

In: Applied Physics Letters, Vol. 79, No. 7, 13.08.2001, p. 931-933.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Jasinski, J, Yu, KM, Walukiewicz, W, Washburn, J & Liliental-Weber, Z 2001, 'Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation', Applied Physics Letters, vol. 79, no. 7, pp. 931-933. https://doi.org/10.1063/1.1390487

Jasinski, J., Yu, K. M., Walukiewicz, W., Washburn, J., & Liliental-Weber, Z. (2001). Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation. Applied Physics Letters, 79(7), 931-933. https://doi.org/10.1063/1.1390487

Jasinski J, Yu KM, Walukiewicz W, Washburn J, Liliental-Weber Z. Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation. Applied Physics Letters. 2001 Aug 13;79(7):931-933. doi: 10.1063/1.1390487

Jasinski, J. ; Yu, K. M. ; Walukiewicz, W. et al. / Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation. In: Applied Physics Letters. 2001 ; Vol. 79, No. 7. pp. 931-933.