METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

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Author(s)

  • B. Y. Tsaur
  • J. W. Mayer
  • M. A. Nicolet
  • K. N. Tu

Detail(s)

Original languageEnglish
Title of host publicationProceedings - Annual Symposium on Computer Applications in Medical Care
PublisherMetall Soc of AIME
Pages142-151
Publication statusPublished - 1980
Externally publishedYes

Conference

TitleIon Implantation Metall, Proc of a Symp at Annu Meet of the Mater Res Soc
CityCambridge, MA, Engl
Period30 November 1979

Abstract

An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.

Bibliographic Note

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Citation Format(s)

METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING. / Tsaur, B. Y.; Mayer, J. W.; Nicolet, M. A. et al.
Proceedings - Annual Symposium on Computer Applications in Medical Care. Metall Soc of AIME, 1980. p. 142-151.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review