Active electronic cancellation of nonlinearity in a High-Q longitudinal-mode silicon resonator by current biasing

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

6 Scopus Citations
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Author(s)

Detail(s)

Original languageEnglish
Title of host publication2014 European Frequency and Time Forum, EFTF 2014
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Pages12-15
ISBN (print)9781479952526
Publication statusPublished - 17 Nov 2015

Conference

Title28th European Frequency and Time Forum, EFTF 2014
PlaceSwitzerland
CityNeuchatel
Period23 - 26 June 2014

Abstract

In this paper, we report the manipulation of nonlinear behavior in a bulk-mode micromechanical resonator for the first time. N-doped single-crystal-silicon (SCS) resonators of the same dimensions but different crystal orientations ( and ) were electrically characterized using capacitive drive and piezoresistive sense. Notably, reversed nonlinear behavior (from spring softening to hardening) was observed in the devices as a result of increasing the bias dc current. We have found that the energy storage capability of the resonator has been enlarged by over 10 times at the transition from spring softening to hardening. This newfound capability to electronically «cancel nonlinearity» could be conveniently applied to improve the phase noise (PN) performance of MEMS oscillators.

Research Area(s)

  • MEMS, nonlinear vibration, nonlinearity, resonator, single crystal silicon

Citation Format(s)

Active electronic cancellation of nonlinearity in a High-Q longitudinal-mode silicon resonator by current biasing. / Zhu, Haoshen; Tu, Cheng; Lee, Joshua E.-Y. et al.
2014 European Frequency and Time Forum, EFTF 2014. Institute of Electrical and Electronics Engineers, Inc., 2015. p. 12-15 7331415.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review