Design, Fabrication, and Measurement of the Low-Loss SOI-Based Dielectric Microstrip Line and its Components

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Article number7524805
Pages (from-to)696-705
Journal / PublicationIEEE Transactions on Terahertz Science and Technology
Volume6
Issue number5
Publication statusPublished - 1 Sep 2016

Abstract

A low-loss dielectric microstrip line (DML) integrated circuit based on silicon (Si) technology is proposed for THz applications in this paper. Using the DML, a coupler and a crossover are designed. In the proposed technology, all THz passive components are made of high-resistivity silicon on insulator (SOI) wafer. To fabricate the proposed transmission line and its components, we developed a high-precision fabrication process for the SOI wafer. A non-contact measurement technology is used to test the fabricated samples. The measured loss per wavelength of DML ranges from 0.0082 to 0.042 dB/λ over 750-925 GHz. The measured isolation of the crossover is 25.45 ± 5.54 dB, and the measured coupler factor of the coupler is-13.22 ± 3.23 dB.

Research Area(s)

  • Coupler, crossover, dielectric microstrip line (DML), dielectric transmission line, integrated circuit, terahertz (THz)

Citation Format(s)

Design, Fabrication, and Measurement of the Low-Loss SOI-Based Dielectric Microstrip Line and its Components. / Zhu, Hao-Tian; Xue, Quan; HUI, Jianan; Pang, Stella W.

In: IEEE Transactions on Terahertz Science and Technology, Vol. 6, No. 5, 7524805, 01.09.2016, p. 696-705.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review