Design, Fabrication, and Measurement of the Low-Loss SOI-Based Dielectric Microstrip Line and its Components
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 7524805 |
| Pages (from-to) | 696-705 |
| Journal / Publication | IEEE Transactions on Terahertz Science and Technology |
| Volume | 6 |
| Issue number | 5 |
| Publication status | Published - 1 Sept 2016 |
Link(s)
Abstract
A low-loss dielectric microstrip line (DML) integrated circuit based on silicon (Si) technology is proposed for THz applications in this paper. Using the DML, a coupler and a crossover are designed. In the proposed technology, all THz passive components are made of high-resistivity silicon on insulator (SOI) wafer. To fabricate the proposed transmission line and its components, we developed a high-precision fabrication process for the SOI wafer. A non-contact measurement technology is used to test the fabricated samples. The measured loss per wavelength of DML ranges from 0.0082 to 0.042 dB/λ over 750-925 GHz. The measured isolation of the crossover is 25.45 ± 5.54 dB, and the measured coupler factor of the coupler is-13.22 ± 3.23 dB.
Research Area(s)
- Coupler, crossover, dielectric microstrip line (DML), dielectric transmission line, integrated circuit, terahertz (THz)
Citation Format(s)
Design, Fabrication, and Measurement of the Low-Loss SOI-Based Dielectric Microstrip Line and its Components. / Zhu, Hao-Tian; Xue, Quan; HUI, Jianan et al.
In: IEEE Transactions on Terahertz Science and Technology, Vol. 6, No. 5, 7524805, 01.09.2016, p. 696-705.
In: IEEE Transactions on Terahertz Science and Technology, Vol. 6, No. 5, 7524805, 01.09.2016, p. 696-705.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
