Contact reaction between Si and Pd-W alloy films
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
|Journal / Publication||Journal of Applied Physics|
|Publication status||Published - 1979|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-0018530173&origin=recordpage|
Contact reactions in the temperature range 250-650 °C between (100) Si and Pd-W binary alloy films of composition Pd80W20 and Pd30W70 have been studied by a combination of ion backscattering, x-ray diffraction, and current-voltage measurement of Schottky barrier height. For the Pd-rich alloy, the reaction around 400 °C produced the silicide Pd2Si by depleting Pd from the alloy and resulted in the formation of a two-layer structure, W/Pd2Si/Si. We have found that the W layer has served effectively as a diffusion barrier for the subsequently deposited Al, indicating that a rectifying contact and its diffusion barrier can be fabricated simultaneously. At higher reaction temperatures, the W layer transforms to WSi2 with some mixture of Pd2Si. The alloying of Pd with W has been found to increase the formation temperature of Pd2Si but decrease that of WSi2. In the Pd 80W20 reaction, Pd2Si forms around 400 °C and WSi2 around 500 °C. In the Pd30W70 reaction, Pd2Si forms around 500 °C and WSi2 around 650 °C.
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