Compact On-Chip Bandpass Filter with Improved In-Band Flatness and Stopband Attenuation in 0.13-μm (Bi)-CMOS Technology

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Yang Yang
  • Hang Liu
  • Xi Zhu
  • Eryk Dutkiewicz
  • Quan Xue

Detail(s)

Original languageEnglish
Article number8010269
Pages (from-to)1359-1362
Journal / PublicationIEEE Electron Device Letters
Volume38
Issue number10
Online published14 Aug 2017
Publication statusPublished - Oct 2017

Abstract

In this letter, an on-chip miniaturized bandpass filter (BPF) is presented, which is based on a grounded center-Tapped ring resonator (CTRR) with shunt capacitive loading. To analyze the principle of this design, a simple but effective equivalent circuit model is provided. Using this model, it is easy to show that the CTRR-based approach has a potential to generate two transmission poles within the passband. Compared with the conventional single-pole-based approach, this dual-pole design not only possesses a flexibility of controlling the passband width, but also has better flatness of insertion loss in the passband. In addition, this approach is able to significantly improve the stopband performance. To further demonstrate the feasibility of this approach in practice, the structure is implemented and fabricated in a commercial 0.13-μm (Bi)-CMOS SiGe technology. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 42.4%. The minimum insertion loss is 2.6 dB, while the stopband rejection is maintained to be better than 20 dB beyond 58 GHz. The chip, excluding the pads, is very compact at only 0.03 mm2 (0.11 × 0.28 mm2).

Research Area(s)

  • Bandpass filter (BPF), Bi-CMOS, millimeter-wave, miniaturization, on-chip resonator, RFIC, silicon-germanium (SiGe)

Citation Format(s)

Compact On-Chip Bandpass Filter with Improved In-Band Flatness and Stopband Attenuation in 0.13-μm (Bi)-CMOS Technology. / Yang, Yang; Liu, Hang; Hou, Zhang Ju et al.

In: IEEE Electron Device Letters, Vol. 38, No. 10, 8010269, 10.2017, p. 1359-1362.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review