Effect of interdiffusion on the subbands in an In0.65Gs0.35As/GaAs multiple-quantum well structure on GaAs substrate at 1.55μm operation wavelength

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)283-288
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume417
Publication statusPublished - 1996
Externally publishedYes

Conference

Title1995 MRS Fall Meeting
PlaceUnited States
CityBoston
Period27 November - 1 December 1995

Abstract

Analysis of high indium concentration in interdiffused In0.65Gs0.35As/GaAs multiple quantum well (MQW) structure on GaAs Substrate is being studied. This material can achieve operating wavelengths around 1.5μm for applications in fiber optics communications. The large lattice mismatch problem (over 4.5% in this study) can be solved by using a linearly-graded InGaAs buffer layer for reducing any dislocation between the adjacent layers. Interdiffusion in the MQW structure can modify the composition profile in order to tailor the optical absorption and refraction properties. Results show that this system can have promising device performance operates at around 1.55μm and which base on the more matured and reliable GaAs technology.

Citation Format(s)

Effect of interdiffusion on the subbands in an In0.65Gs0.35As/GaAs multiple-quantum well structure on GaAs substrate at 1.55μm operation wavelength. / Chan, M. C Y; Li, E. Herbert; Chan, K. S.
In: Materials Research Society Symposium - Proceedings, Vol. 417, 1996, p. 283-288.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal