Contact for shallow junctions
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 71-78 |
| Journal / Publication | Thin Solid Films |
| Volume | 140 |
| Issue number | 1 |
| Publication status | Published - 16 Jun 1986 |
| Externally published | Yes |
Link(s)
Abstract
A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated. © 1986.
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.
Citation Format(s)
Contact for shallow junctions. / Tu, K. N.
In: Thin Solid Films, Vol. 140, No. 1, 16.06.1986, p. 71-78.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
