DESIGN OF HIGH POWER SOLID STATE S-BAND AMPLIFIERS.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 131-132, 135 |
| Journal / Publication | Electronic Engineering (London) |
| Volume | 59 |
| Issue number | 729 |
| Publication status | Published - Sept 1987 |
| Externally published | Yes |
Link(s)
Abstract
The design of a high power pulse amplifier at S-band presents many difficulties, as is evidenced by the poor availability of such amplifiers compared with for example GaAsFET cw communications amplifiers at around the ten watt level. We consider the options available to the designer in selecting transistors, passive components, matching circuits and divider/combiner circuits, for the design of amplifiers with output powers over 100w. The performance obtained from typical amplifiers built by the authors is presented.
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Citation Format(s)
DESIGN OF HIGH POWER SOLID STATE S-BAND AMPLIFIERS. / Yelland, John; Chan, W.
In: Electronic Engineering (London), Vol. 59, No. 729, 09.1987, p. 131-132, 135.
In: Electronic Engineering (London), Vol. 59, No. 729, 09.1987, p. 131-132, 135.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
