Development of ultrafine lamellar structures in two-phase γ-TiAl alloys

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Detail(s)

Original languageEnglish
Pages (from-to)105-117
Journal / PublicationMetallurgical and Materials Transactions A: Physical Metallurgy and Materials Science
Volume29
Issue number1
Publication statusPublished - 1998
Externally publishedYes

Abstract

Processing of two-phase -γ-TiAl alloys (Ti-47Al-2Cr-2Nb, or minor modifications thereof) above the α-transus temperature (Tα) produced unique refined-colony/ultrafine lamellar structures in both powder- and ingot-metallurgy (PM and IM, respectively) alloys. These ultrafine lamellar structures consist of fine laths of the γ and α2 phases, with average interlamellar spacings (λL) of 100 to 200 nm and α22 spacings (λα) of 200 to 500 nm, and are dominated by γ/α2 interfaces. This characteristic microstructure forms by extruding PM Ti-47Al-2Cr-2Nb alloys at 1400 °C and also forms with finer colony size but slightly coarser, fully lamellar structures by hot-extruding similar IM alloys. Alloying additions of B and W refine λL and λα in both IM Ti-47Al (cast and heat treated at 1400 °C) and IM Ti-47Al-2Cr-2Nb alloys (extruded at 1400 °C). The ultrafine lamellar structure in the PM alloy remains stable during heat treatment at 900 °C for 2 hours but becomes unstable after 4 hours at 982 °C; the ultrafine lamellar structure remains relatively stable after aging for >5000 hours at 800 °C. Additions of B + W dramatically improve the coarsening resistance of λL and λα in the IM T1-47A1 alloys aged for 168 hours at 1000 °C. In both the PM and IM Ti-47Al-2Cr-2Nb alloys, these refined-colony/ultrafine lamellar structures correlate with high strength and good ductility at room temperature, and very good strength at high temperatures. While refining the colony size improves the room-temperature ductility, alloys with finer λL are stronger at both room and high temperatures. Additions of B + W produce finer as-processed λL and λα in IM TiAl alloys and stabilize such structures during heat treatment or aging.