Low loss dielectric ridge waveguide based on high resistivity silicon for E11y Mode Propagation at 750-1000GHz

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

3 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Title of host publication2015 IEEE MTT-S International Microwave Symposium
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479982752
Publication statusPresented - May 2015

Publication series

NameIEEE MTT-S International Microwave Symposium
ISSN (Print)0149-645X
ISSN (Electronic)2576-7216

Conference

Title2015 IEEE MTT-S International Microwave Symposium (IMS 2015)
PlaceUnited States
CityPhoenix
Period17 - 22 May 2015

Abstract

In this paper, dielectric ribbon waveguides (DRWs) are designed to work at 750-1000 GHz. In this frequency band, the Deep Reactive Ion Etching (DRIE) of high resistivity silicon fabrication process is selected to fabricate the DRW. Our experiments show that the average attenuation constant of DRW is merely 0.107dB/mm at 750-1000GHz. Good agreements between the measured and simulated results are observed.

Research Area(s)

  • Deep Reactive Ion Etch (DRIE), Dielectric Ridge Waveguide (DRW), high resistivity silicon

Citation Format(s)

Low loss dielectric ridge waveguide based on high resistivity silicon for E11y Mode Propagation at 750-1000GHz. / Zhu, Haotian; Xue, Quan; Pang, Stella W.; Hui, Jianan; Zhao, Xinghai.

2015 IEEE MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc., 2015. 7166975 (IEEE MTT-S International Microwave Symposium).

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review