Low loss dielectric ridge waveguide based on high resistivity silicon for E11y Mode Propagation at 750-1000GHz
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Title of host publication | 2015 IEEE MTT-S International Microwave Symposium |
Publisher | Institute of Electrical and Electronics Engineers, Inc. |
ISBN (print) | 9781479982752 |
Publication status | Presented - May 2015 |
Publication series
Name | IEEE MTT-S International Microwave Symposium |
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ISSN (Print) | 0149-645X |
ISSN (electronic) | 2576-7216 |
Conference
Title | 2015 IEEE MTT-S International Microwave Symposium (IMS 2015) |
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Place | United States |
City | Phoenix |
Period | 17 - 22 May 2015 |
Link(s)
Abstract
In this paper, dielectric ribbon waveguides (DRWs) are designed to work at 750-1000 GHz. In this frequency band, the Deep Reactive Ion Etching (DRIE) of high resistivity silicon fabrication process is selected to fabricate the DRW. Our experiments show that the average attenuation constant of DRW is merely 0.107dB/mm at 750-1000GHz. Good agreements between the measured and simulated results are observed.
Research Area(s)
- Deep Reactive Ion Etch (DRIE), Dielectric Ridge Waveguide (DRW), high resistivity silicon
Citation Format(s)
Low loss dielectric ridge waveguide based on high resistivity silicon for E11y Mode Propagation at 750-1000GHz. / Zhu, Haotian; Xue, Quan; Pang, Stella W. et al.
2015 IEEE MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers, Inc., 2015. 7166975 (IEEE MTT-S International Microwave Symposium).
2015 IEEE MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers, Inc., 2015. 7166975 (IEEE MTT-S International Microwave Symposium).
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review