Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Shinho Cho
  • S. K. Lee
  • P. K. Song
  • Y. R. Cho
  • Heesoo Lee
  • Y. G. Son
  • W. Zhou

Detail(s)

Original languageEnglish
Pages (from-to)283-286
Journal / PublicationMaterials Letters
Volume68
Publication statusPublished - 1 Feb 2012

Abstract

NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N 2/H 2 forming gas at 550 °C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 × 10 18-2.18 × 10 20 cm - 3, 2.33-12.76 cm 2/Vs, and 2.39 × 10 - 1-1.24 × 10 - 2 ω cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices. © 2011 Elsevier B.V. All rights reserved.

Research Area(s)

  • Al-doped ZnO, NiO, p-type, Sol-gel method, Transparent conducting oxide

Citation Format(s)

Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method. / Li, Lei; Hui, K. S.; Hui, K. N.; Park, H. W.; Hwang, D. H.; Cho, Shinho; Lee, S. K.; Song, P. K.; Cho, Y. R.; Lee, Heesoo; Son, Y. G.; Zhou, W.

In: Materials Letters, Vol. 68, 01.02.2012, p. 283-286.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review