Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Original languageEnglish
Pages (from-to)427-493
Journal / PublicationJournal of Differential Equations
Volume170
Issue number2
Publication statusPublished - 1 Mar 2001

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DOI
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Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0035285315&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(1cf79562-0d90-4342-bf1b-4b05c1d3a0b6).html

Abstract

In this paper, we study the asymptotic behavior of the solutions to the boundary value problems for hydrodynamic and drift diffusion models for semiconductors. Under the insulating boundary condition and equal mass condition on electron and doping profile, we prove that the solutions to these two systems converge to the unique stationary solution time asymptotically. © 2001 Academic Press.

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asymptotic solution... INIS
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semiconductor mater... INIS
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diffusion INIS
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solutions INIS
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boundary-value prob... INIS
100
hydrodynamics INIS
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Asymptotics Mathematics
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Initial-Boundary Va... Mathematics
100
Diffusion Model Mathematics
100
Semiconductors Keyphrases
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[ RIS ] [ BibTeX ]
Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors. / Hsiao, Ling; Yang, Tong.
In: Journal of Differential Equations, Vol. 170, No. 2, 01.03.2001, p. 427-493.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review