A Nucleation Site and Mechanism Leading to Epitaxial Growth of Diamond Films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • S. T. Lee
  • H. Y. Peng
  • X. T. Zhou
  • N. Wang
  • I. Bello
  • Y. Lifshitz

Detail(s)

Original languageEnglish
Pages (from-to)104-106
Journal / PublicationScience
Volume287
Issue number5450
Publication statusPublished - 7 Jan 2000

Abstract

A diamond nucleation site responsible for epitaxial growth of diamond on silicon by chemical vapor deposition (CVD) is identified in high-resolution transmission electron microscopic images. Other sites in the same sample leading to polycrystalline growth, but deleterious to epitaxial CVD growth, are also described. A mechanism for the heteroepitaxial growth of diamond is suggested, in which etching of the nondiamond carbon binder exposes and removes nonadherent nanodiamond nuclei, leaving intact only those directly nucleated on the silicon substrate. This work enhances our understanding of diamond nucleation and heteroepitaxial growth and its potential applications.

Citation Format(s)

A Nucleation Site and Mechanism Leading to Epitaxial Growth of Diamond Films. / Lee, S. T.; Peng, H. Y.; Zhou, X. T.; Wang, N.; Lee, C. S.; Bello, I.; Lifshitz, Y.

In: Science, Vol. 287, No. 5450, 07.01.2000, p. 104-106.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal