Electrically controllable spin transport in bilayer graphene with Rashba spin-orbit interaction

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)2957-2962
Journal / PublicationPhysics Letters, Section A: General, Atomic and Solid State Physics
Issue number24
Online published14 Jun 2019
Publication statusPublished - 22 Aug 2019


We study the spin transport in bilayer graphene nanoribbons (BGNs) in the presence of Rashba spin-orbit interaction (SOI) and external gate voltages. It is found that the spin polarization can be significantly enhanced by the interlayer asymmetry or longitudinal mirror asymmetry produced by external gate voltages. Rashba SOI alone in BGNs can only generate current with spin polarization along the in-plane y direction, but the polarization components can be found along the x, y and z directions when a gate voltage is applied. High spin polarization with flexible orientation is obtained in the proposed device. Our findings shed new light on the generation of highly spin-polarized current in BGNs without external magnetic fields, which could have useful applications in spintronics device design.

Research Area(s)

  • Bilayer graphene, Quantum transport, Spin polarization, Spin-orbit interaction

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