Boosting the Quality Factor of Low Impedance VHF Piezoelectric-on-Silicon Lateral Mode Resonators Using Etch Holes

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationProcedia Engineering
PublisherELSEVIER
Pages1261-1264
Volume168
ISBN (Print)1877-7058
Publication statusPublished - Oct 2016

Publication series

Name
ISSN (Print)1877-7058

Conference

Title30th Eurosensors Conference, Eurosensors 2016
PlaceHungary
CityBudapest
Period4 - 7 September 2016

Link(s)

Abstract

We report a unique method of using etch-holes to greatly improve the unloaded quality factor (Qu) of VHF-band low impedance laterally vibrating AlN Thin-film Piezoelectric-on-Silicon (TPoS) MEMS resonators. We have validated the proposed method experimentally by applying it to fabricated devices with resonant frequencies of 105 MHz. Based on the experimental results of several fabricated samples, we show that the quality factors of the resonators consistently improve by almost four times using the proposed method. The experimental results are corroborated by finite-element (FE) simulations, which show that the holes re-distribute the strain energy in the resonator and suppress the movement in the supporting beam tethers. Less energy in the tethers leads to reduction of anchor loss and thus enhances Qu.

Research Area(s)

  • anchor loss, etch holes, Piezoelectric-on-silicon resonators

Citation Format(s)

Boosting the Quality Factor of Low Impedance VHF Piezoelectric-on-Silicon Lateral Mode Resonators Using Etch Holes. / Tu, C.; Lee, J. E.-Y.

Procedia Engineering. Vol. 168 ELSEVIER, 2016. p. 1261-1264.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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