Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
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| Title of host publication | PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 |
| Editors | KL Narasimhan, DK Sharma |
| Publisher | IEEE |
| Pages | 107-110 |
| ISBN (Print) | 978-1-4244-1727-8 |
| Publication status | Published - 2007 |
Conference
| Title | 14th International Workshop on the Physics of Semiconductor Devices |
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| Place | India |
| City | Mumbai |
| Period | 17 - 20 December 2007 |
Link(s)
| Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(16ef13ff-682d-4c4b-952c-de1a6ded51ab).html |
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Abstract
Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping kinetics and chemical nature of defects present in ultrathin high-k dielectric films deposited on p-Ge (100) substrate. Both the band and defect-related electron states were characterized through EPR, IPE, C-V and IN measurements under UV-illumination. The interface trap spectrum in Ge/high-k oxide systems appears to be dominated by slow acceptor states with a broad energy distribution as major contribution comes from the imperfections located in the insulating layer. However, the oxynitride samples demonstrate lower defect or trapping behavior over non-nitrided samples.
Research Area(s)
- high-k dielectric, Ge, charge trapping, magnetic resonance, internal photoemission, GERMANIUM MOS DIELECTRICS
Citation Format(s)
Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge. / Bera, M. K.; Mahata, C.; Maiti, C. K.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007. ed. / KL Narasimhan; DK Sharma. IEEE, 2007. p. 107-110.Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
