Characterization of strained InGaAs single quantum well structures by ion beam methods

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Original languageEnglish
Pages (from-to)45-47
Journal / PublicationApplied Physics Letters
Issue number1
Publication statusPublished - 1990
Externally publishedYes


We have investigated strained InGaAs single quantum well structures using MeV ion beam methods. The structural properties of these structures, including composition and well size, have been studied. It has been found that the composition obtained by Rutherford backscattering spectrometry and particle-induced x-ray emission techniques agrees very well with that obtained by the ion channeling method.